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asksoft@proton.meSEMulator3D® is a semiconductor process modeling platform that offers wide ranging technology development capabilities. Based on highly efficient physics-driven voxel modeling technology, SEMulator3D has a unique ability to model complete process flows.
Starting from input design data, SEMulator3D follows an integrated process flow description to create the virtual equivalent of the complex, 3D structures created in the fab.SEMulator3D process modeling and analysis is used for fast and accurate “virtual fabrication” of advanced nano-fabrication processes, allowing engineers to understand manufacturing effects early in the development process and reduce time-consuming and costly silicon learning cycles.
Introducing SEMulator3D 9.3 – Advanced Virtual Wafer Fabrication from Coventor
At SEMICON West, Coventor unveiled the latest iteration of its industry-leading virtual fabrication platform, SEMulator3D v9.0, a powerful solution designed to accelerate process development and improve yield in advanced semiconductor manufacturing. With a fresh new look and significant enhancements under the hood, this release empowers engineers to model, simulate, and optimize complex wafer fabrication processes with unprecedented accuracy—reducing both time and cost traditionally associated with physical experimentation.
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Why Virtual Fabrication Matters
As semiconductor processes become increasingly complex—especially with the rise of vertical architectures like 3D NAND, vertical Flash, and III-V nanowires—the traditional approach of running experimental wafers is no longer sufficient. Physical trials are not only costly but also time-consuming, particularly when executing design-of-experiments (DOE) workflows that require numerous iterations. In many cases, the biggest benefit of virtual fabrication is time savings: keeping critical equipment active while eliminating unnecessary wafer runs helps maintain productivity during new process ramps.
Systematic structural defects pose a growing challenge in advanced nodes. Shadowing effects, complex doping profiles, and deep etch variations can significantly impact device performance and yield. By enabling early detection and mitigation of these issues through simulation, SEMulator3D 9.3 plays a crucial role in ensuring successful technology ramp-ups.
Key New Features in Version 5.0
Enhanced Dopant Modeling
A completely re-engineered dopant module now supports advanced process steps including ion implantation, thermal diffusion, doped diffusion, and doped epitaxy. This upgrade enables accurate modeling of how dopants interact with complex 3D structures. Users can visualize concentration gradients and species-specific distributions, such as Boron and Arsenic in 20nm SRAM devices, revealing critical details like gate/spacer shadowing effects and diffusion behavior differences between NFETs and PFETs.
Visibility and Shadowing Analysis
The new visibility analysis module addresses both intentional and unintentional off-axis effects in lithography and etch processes. Whether simulating angled etches or analyzing edge-of-wafer variations on 300mm substrates, users can now predict and correct for shadowing-induced defects that could otherwise compromise yield. This feature is especially valuable for optimizing process uniformity across the entire wafer.
Expanded Tool Integration Capabilities
While SEMulator3D remains the gold standard for process modeling and visualization, version 5.0 enhances interoperability with external simulation and analysis tools. Building on existing export capabilities, the updated platform now offers broader support for integration with mesh-based modeling environments, allowing users to seamlessly incorporate SEMulator3D results into downstream electrical, thermal, or mechanical simulations.